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Single Crystal Sapphire
Single Crystal Sapphire and Step Sapphire Wafers
Sapphire(a-Al2O3) is widely used in many fields from its excellent characteristics, in particular chemical resistance, thermal conductivity, hardness, transparency. Namiki grows single crystal sapphire by EFG method, featuring any desired section forms can be obtained.

Variously-shaped Nano-step structures can be formed on the Sapphire wafer surface, and have been expected to be used as the height standard sample for SPM and Immobilization plate for observing biomaterials.
Characteristics of Single Crystal Sapphire
1. High-hardness - abrasion resistance
2. Transparency
- in the range from ultraviolet to infrared light (200-7000nm)
3. Chemical resistance and heat resistance
- resist almost all kinds of acid and alkaline, heat up to 2000 ºC.
4. Suitable for the application of insulation
   property required.
 Characteristics oh EFG Method
1. Growth of sapphire wafers with large diameter
2. Controllability of crystal orientation
   
Application of Single Crystal Sapphire
 Sapphire Wafers
 Semiconductor wafers
 LED wafers
 Projectors
 Optical device wafers

 Application of Sapphire Tube
 Analyzer
 Guard pipe of thermocouple
Customized Sapphire Processing
Single Crystal Sapphire Growth
Namiki produces single crystal sapphire in any desired section shape by EFG Method.
(Edge-defined Film-fed Growth Method)
Images of Single Crystal Sapphire Images of EFG Method
Sapphire Crystal EFG Method
引き上げ形状
Sectional View
Dimensions
Tolerance
Crystal Orientation
Surface Flatness
0.3～300mm
t=0.01～100
±0.005
±2deg
Ra=0.0001μm
0.3～300mm
±0.005
C Axis in
5μm
O.D:Max.Φ100mm
±0.005
-
5μm
I.D:Min.Φ2.0mm
±0.002
-
5μm
Offer any desired
sectional shape.
-
C Axis in
5μm

Step Sapphire Wafers
Introduction of Technologies
Step Wafers (height: 0.22nm)
Relevant Patent Applications: JPA2007-181007
利点
· Long Life
· Low Cost (re-cleanable)
· Useful in various measurement environment
 (High Temperature Resistance, Chemical Resistance)
· Entire Linear Surface in Wide Area
· Step Height Uniformity (0.22nm±0.01nm)
· Extra Smooth Surface Terraces
· Terrace Width is Controllable (100～200nm)

Multi Step Wafers(height; 1.76nm)
Relevant Patent Applications:
JPA006-284316, JPA2007-181007



Bottom Plane of etch pit
Expected Applications
 Height standard sample for SPM
 Immobilization plate for observing biomaterials such as DNA, Protein.
Crystal Structure of Sapphire



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